![]() ![]() Since the conventional drift-diffusion approximation is not valid for simulation of device behavior at this microscopic scale, quantum simulation models based on the Schriidinger equation are required to accurately predict the behavior of the device. These devices exhibit negative differential resistance (NDR) and/or negative transconductance in their I-V characteristics and have active dimensions of a few nanometers. Abstract-Quantum electronic devices such as resonant tunnel-ing diodes and transistors are now beginning to be used in ultra-fast and compact circuit designs. The component model of NDR and QSPICE were added with a host of quantum tunneling devices, including resonant tunneling diode (RTD), bound state resonant tunneling transistor (BSRTT), resonant tunneling barrier transistor (RTBT), resonant hot electron transistor (RHET), and surface tunneling transistor (STT). The second version, named QSPICE (1999), was augmented with homotopy-based convergence routine, named RTD-stepping as well as a novel limiting algorithm to overcome the limitations of source stepping and Gmin stepping that are used in commercial SPICE simulators. ![]() First augmented circuit simulator version was named NDR SPICE (1994) and was added with simple mechanisms like forced convergence routine to recover from oscillatory (non-convergence) situations in DC simulation. Research Group for RTD and other quantum devices having folded-back I-V.
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